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igbt highspeedigbtintrenchandfieldstoptechnology recommendedincombinationwithsicdiodeidh15s120 IGW25N120H3 1200vhighspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 highspeedigbtintrenchandfieldstoptechnology recommendedincombinationwithsicdiodeidh15s120 features: trenchstop tm technologyoffering ?bestinclassswitchingperformance:lessthan500jtotal switchinglossesachievable ?verylowv cesat ?lowemi ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?solarinverters ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGW25N120H3 1200v 25a 2.05v 175c g25h1203 pg-to247-3 g c e 1 2 3
3 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 g c e 1 2 3
4 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 maximumratings parameter symbol value unit collector-emitter voltage v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 50.0 25.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 100.0 a turnoffsafeoperatingarea v ce 1200v, t vj 175c - 100.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 600v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =175c t sc 10 s powerdissipation t c =25c powerdissipation t c =100c p tot 326.0 156.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.46 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =25.0a t vj =25c t vj =125c t vj =175c - - - 2.05 2.50 2.70 2.40 - - v gate-emitter threshold voltage v ge(th) i c =0.85ma, v ce = v ge 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - - 250.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =25.0a - 13.0 - s g c e 1 2 3
5 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1430 - output capacitance c oes - 95 - reverse transfer capacitance c res - 75 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =25.0a, v ge =15v - 115.0 - nc short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 600v, t sc 10s t vj =175c - 87 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 27 - ns rise time t r - 41 - ns turn-off delay time t d(off) - 277 - ns fall time t f - 17 - ns turn-on energy e on - 1.80 - mj turn-off energy e off - 0.85 - mj total switching energy e ts - 2.65 - mj t vj =25c, v cc =600v, i c =25.0a, v ge =0.0/15.0v, r g =23.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (ikw25n120h3) reverse recovery. turn-on energy e on - 0.08 - mj turn-off energy e off - 0.27 - mj total switching energy e ts - 0.35 - mj t vj =25c, v cc =800v, i c =10.0a, v ge =0.0/15.0v, r g =3.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (idh15s120) reverse recovery. g c e 1 2 3
6 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 26 - ns rise time t r - 35 - ns turn-off delay time t d(off) - 347 - ns fall time t f - 50 - ns turn-on energy e on - 2.60 - mj turn-off energy e off - 1.70 - mj total switching energy e ts - 4.30 - mj t vj =175c, v cc =600v, i c =25.0a, v ge =0.0/15.0v, r g =23.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (ikw25n120h3) reverse recovery. turn-on energy e on - 0.10 - mj turn-off energy e off - 0.62 - mj total switching energy e ts - 0.72 - mj t vj =175c, v cc =800v, i c =10.0a, v ge =0.0/15.0v, r g =3.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode (idh15s120) reverse recovery. g c e 1 2 3
7 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =600v, v ge =15/0v, r g =23 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 g c e 1 2 3
8 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 70 80 90 100 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 0 20 40 60 80 100 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 10 15 0 15 30 45 60 75 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c =12.5a i c =25a i c =50a g c e 1 2 3
9 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =23 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 5 15 25 35 45 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =25a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =600v, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.85ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 typ. min. max. g c e 1 2 3
10 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =23 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 5 15 25 35 45 0 2 4 6 8 10 12 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =25a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 0 1 2 3 4 5 6 7 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =600v, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 175 0 1 2 3 4 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 0 1 2 3 4 5 6 e off e on e ts g c e 1 2 3
1 0a IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 1. typicalswitchingenergylossesasafunction ofcollectorcurrent (ind.load, t j =125c, v ce =800v, v ge =15/0v, r g =3 w ,diodeidh15s120) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e off e on e ts figure 2. typicalswitchingenergylossesasafunction ofgateresistor (ind.load, t j =125c, v ce =800v, v ge =15/0v, i c =10a,diodeidh15s120) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e off e on e ts figure 3. typicalswitchingenergylossesasafunction ofjunctiontemperature (indload, v ce =800v, v ge =15/0v, i c =10a, r g =3 w ,diodeidh15s120) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 e off e on e ts figure 4. typicalswitchingenergylossesasafunction ofcollectoremittervoltage (ind.load, t j =125c, v ge =15/0v, i c =10a, r g =3 w ,diodeidh15s120) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e off e on e ts
11 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 17. typicalgatecharge ( i c =25a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 240v 960v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 600v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 40 60 80 100 120 140 160 180 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 600v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 12 14 16 18 20 0 10 20 30 40 50 g c e 1 2 3
12 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.08133 2.6e-4 2 0.09366 1.7e-3 3 0.22305 0.01009673 4 0.05925 0.0336145 5 5.7e-3 0.2730749 g c e 1 2 3
13 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 g c e 1 2 3 pg-to247-3
14 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 g c e 1 2 3 pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
15 IGW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-02-27 revisionhistory IGW25N120H3 revision:2014-02-27,rev.2.1 previous revision revision date subjects (major changes since last revision) 1.1 2011-12-12 preliminary data sheet 2.1 2014-02-27 final data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e 1 2 3 pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3

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